| PART |
Description |
Maker |
| MX25L1605ZM MX25L1605ZMC-20 MX25L1605ZMC-20G MX25L |
16M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY 16M X 1 FLASH 2.7V PROM, DSO8
|
Macronix International Co., Ltd.
|
| HYB3165405ATL-60 HYB3165405ATL-50 HYB3165405ATL-40 |
16M x 4 Bit 4k EDO DRAM
16M x 4 Bit 8k EDO DRAM
16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| UPD4616112F9-BC80-BC2 UPD4616112F9-BC90-BC2 |
16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT 1,600位CMOS移动指明内存100万字6
1M X 16 APPLICATION SPECIFIC SRAM, 90 ns, PBGA48 6 X 8 MM, FBGA-48
|
NEC, Corp.
Infineon Technologies AG
NEC Corp.
|
| MBM29F160TE70TR MBM29F160BE70TR MBM29F160TE70 |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT
|
SPANSION[SPANSION]
|
| MBM29LV160T-90PFTN MBM29LV160T-90PFTR MBM29LV160B- |
FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT
|
SPANSION[SPANSION]
|
| MX25L1606EM1I-12G MX25L1606EM2I-12G MX25L1606EMI-1 |
3V, 16M-BIT [x 1/x 2] CMOS SERIAL FLASH MEMORY
|
Macronix International
|
| TC58V16BFT |
16M-Bit CMOS NAND Flash EPROM
|
Toshiba Semiconductor
|
| NN5216805 |
(NN5216405 / NN5216805) CMOS 16M-Bit SDRAM
|
Nippon Steel Semiconductor
|
| MX29LV017AXEI-90 MX29LV017A MX29LV017ATC-70 MX29LV |
16M-BIT [2Mx8] CMOS SINGLE VOLTAGE
|
ETC[ETC]
|
| MBM29DL161BE-90PBT MBM29DL161BE-70TR MBM29DL161BE- |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
